Preparation of CuSe Thin Films by Chemical Vapor Deposition via Water Splitting for Hydrogen Generation

Joun Ali Faraz; Sana Tariq; M. Bilal; Tanvir Hussain

Authors

Joun Ali Faraz The University of Management and Technology C-II Block C 2 Phase 1 Johar Town, Lahore, Punjab 54770
Sana Tariq The University of Management and Technology C-II Block C 2 Phase 1 Johar Town, Lahore, Punjab 54770
M. Bilal The University of Management and Technology C-II Block C 2 Phase 1 Johar Town, Lahore, Punjab 54770
Tanvir Hussain The University of Management and Technology C-II Block C 2 Phase 1 Johar Town, Lahore, Punjab 54770

Keywords:

Semiconductor Heterostructures, Hydrogen Production, Morphological Analysis, Three-Electrode Cell, Cuse-500°C, Cuse-600°C, Cuse-650°C

Abstract

In recent years, significant research has been done on semiconductor heterostructures to produce hydrogen by water splitting. The absorption of visible light and photoelectrochemical properties of CuO thin film is enhanced by the selenization. The selenization of CuO thin film is done by chemical vapor deposition (CVD) at various temperatures. The structural properties of the prepared samples were carried by XRD and the morphological properties of the prepared film were done by scanning electron microscopy. Optical properties reveal that the bandgap was decreased by increasing the selenization temperature. The solar light to hydrogen conversion efficiency of the CuSe-500^oC, CuSe-600^oC, and CuSe-650^oC films were estimated by using three-electrode cells. It was noticed that CuSe-650^oC showed much better STH% compared to pristine CuO thin film.

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