Design of a High Gain Dual Band Patch Antenna with T Slot Ground Structure for Millimeter Wave Communication Applications
Keywords:
28/38GHz band, Microstrip-Patch, 5G, Dual-band, High Gain, slots, BandwidthAbstract
This paper introduces a novel design approach for achieving high gain, dual-band operation, and enhanced bandwidth in a microstrip patch antenna tailored for 5G applications. The antenna operates at the millimeter-wave bands of 28 GHz and 38 GHz, crucial frequencies for the next-generation 5G wireless communication systems. The proposed design employs two inverted T-shaped slots on the patch to enable dual-band functionality. Simultaneously, a very high gain is attained by strategically inserting two inverted T-shaped slots on the radiating element of the patch. To further improve the antenna's bandwidth, a ground slot structure with three different types of slots U-shaped, L-shaped, and T-shaped are compared on the ground plane. The best bandwidth enhancement is achieved by T shape Slot on both bands. The substrate chosen for the antenna fabrication is Rogers RT Duroid 5880, characterized by a thickness of 0.501mm, a low loss tangent of 0.0009, and a relative permittivity constant of 2.2. The simulations are conducted using Ansys HFSS software proposed antenna design, demonstrate impressive performance metrics. Maximum gains of 17 dB at 28 GHz and 38 GHz are achieved form T shape slot ground configuration, the U-shaped slot configuration yields a maximum gain of 15 dB, and the L-shaped slot configuration achieves 7.8 db. Furthermore, the impedance bandwidth response at the respective resonating frequencies extends to 1 and 2 GHz below the -10dB line, showcasing the antenna's excellent bandwidth characteristics. In terms of form factor, the proposed antenna is compact, measuring 16.2 x 12.8 x 0.501 mm. This compact size, coupled with the high gain and wide bandwidth at both operating bands, making the antenna well-suited for integration into 5G applications.
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